In this work, the mechanism of change in the electrical characteristics of thin PbSe chalcogenide films as a result of the photothermal action of continuous laser radiation has been studied. It is shown that as a result of laser action at an intensity of 76 W/cm2 and a scanning rate of 150 μm/s, the electrical resistance changes from 1.4 kΩ to 1.2 kΩ. After photothermal treatment, the current in the modified region increased by 62.8% compared to the initial film in the absence of an external voltage and by 40% when a voltage of 4 V was applied.
Ольхова А.А., Патрикеева А.А. (науч. рук. Сергеев М.М.) MODIFICATION OF THE ELECTRICAL CHARACTERISTICS OF A PBSE FILM BY LASER RADIATION // Сборник тезисов докладов конгресса молодых ученых. Электронное издание. – СПб: Университет ИТМО, [2022]. URL: https://kmu.itmo.ru/digests/article/8535