In this study, the influence of non-uniform elastic strain field of the dilatational nano-disk, which is buried in a half-space or in a nanowire (NW), on the electronic band structure of III-nitride semiconductor compounds is investigated. InxGa1-xN nano-disk has a thickness h corresponding to the lattice constant c in the [0001] direction of the wurtzite crystal structure and the matrix material is assumed to be GaN. The elastic properties of the disk in a half-space or in a NW are studied by using the virtual defect method [1] to account for the boundary conditions at the free surfaces of the matrix material. The k.p perturbation theory approach is used to analyze the effect of elastic strains on the conduction band and valence band structure of semiconductors.
Нгуен В. (науч. рук. Романов А.Е.) Influence of the elastic field of dilatational nano-disk on the electronic band structure of III-nitride semiconductors // Сборник тезисов докладов конгресса молодых ученых. Электронное издание. – СПб: Университет ИТМО, [2024]. URL: https://kmu.itmo.ru/digests/article/13263