The work demonstrates a new method for the synthesis of β-(AlxGa1-x)2O3 films by spray pyrolysis (spraying a sol onto a substrate).Varying the percentage of Al in the (AlxGa1-x)2O3 solid solution makes it possible to adjust the band gap of Ga2O3 thin film. Sol-gel synthesis has established itself as the simplest and least expensive method for producing semiconductor epitaxial layers due to a fairly simple technology. In this work, β-(AlxGa1-x)2O3 thin films with band gaps of 5 eV by spray pyrolysis method through alloying with Al.The content of Al is about 3.6%.
Чжан С., Панов Д.Ю., Спиридонов В.А., Бауман Д.А. (науч. рук. Романов А.Е.) PREPARATION AND PROPERTIES OF β-(AlxGa1-x)2O3 THIN FILMS BY SPRAY PYROLYSIS // Сборник тезисов докладов конгресса молодых ученых. Электронное издание. – СПб: Университет ИТМО, [2024]. URL: https://kmu.itmo.ru/digests/article/12440