We prepared Ga2O3 thin films by spray pyrolysis method. We obtained relevant data on the influence of environmental parameters on β-Ga2O3 thin films. The film quality was analyzed by scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectroscopy. At the same time, X-ray diffraction was used to analyze the phase of the thin film, and it was confirmed that the thin film after annealing at 900 ° C was formed by β-Ga2O3.

Чжан С., Панов Д.Ю., Спиридонов В.А. (науч. рук. Романов А.Е.) Preparation of Ga2O3 Thin Films by Spray Pyrolysis // Сборник тезисов докладов конгресса молодых ученых. Электронное издание. – СПб: Университет ИТМО, [2023]. URL: https://kmu.itmo.ru/digests/article/10013